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     BAS521 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 5 November 2010 5 of 11 NXP Semiconductors BAS521 Single high-voltage switching diode 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Based on square wave currents. Tj =25°C prior to surge. Fig 5. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg703 10 1 102 IFSM (A) 10?1 tp ( μs) 11010 102 103 4 (1) IR =3mA Fig 6. Reverse recovery time test circuit and waveforms trr (1) + I F t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 |